Technical Specifications of NGB8206N
| Datasheet |  NGB8206N datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - IGBTs - Single |
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| Manufacturer | ON Semiconductor |
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| Series | - |
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| Packaging | Tube |
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| IGBT Type | - |
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| Voltage - Collector Emitter Breakdown (Max) | 390V |
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| Current - Collector (Ic) (Max) | 20A |
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| Current - Collector Pulsed (Icm) | 50A |
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| Vce(on) (Max) @ Vge, Ic | 1.9V @ 4.5V, 20A |
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| Power - Max | 150W |
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| Switching Energy | - |
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| Input Type | Logic |
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| Gate Charge | - |
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| Td (on/off) @ 25°C | -/5μs |
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| Test Condition | 300V, 9A, 1 kOhm, 5V |
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| Reverse Recovery Time (trr) | - |
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| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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| Mounting Type | Surface Mount |
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| Supplier Device Package | D2PAK |
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