Technical Specifications of NE68819-A
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - RF |
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| Manufacturer | CEL |
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| Series | - |
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| Packaging | Bulk |
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| Transistor Type | NPN |
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| Voltage - Collector Emitter Breakdown (Max) | 6V |
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| Frequency - Transition | 5GHz |
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| Noise Figure (dB Typ @ f) | 1.7dB ~ 2.5dB @ 2GHz |
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| Gain | - |
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| Power - Max | 125mW |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA, 1V |
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| Current - Collector (Ic) (Max) | 100mA |
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| Mounting Type | Surface Mount |
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| Package / Case | SOT-523 |
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| Supplier Device Package | 3-SuperMiniMold (19) |
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