Technical Specifications of NE856M03-A
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | CEL |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.4dB ~ 2.5dB @ 1GHz |
Gain | - |
Power - Max | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 7mA, 3V |
Current - Collector (Ic) (Max) | 100mA |
Mounting Type | Surface Mount |
Package / Case | SOT-623F |
Supplier Device Package | 3-SuperMiniMold (M03) |
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