Navigation
Home
About us
Products
Manufacturers
RFQ
Service
FAQ
Contact us
ICRFQ.com - Electronic Components Distributor in China Since 2003
We make your sourcing easier!
Get A Fast Quote Worldwide!
[email protected]
Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - RF > NE856M03-A

NE856M03-A

Manufacturer Part Number NE856M03-A
Manufacturer CEL
Description TRANSISTOR NPN 1GHZ MINIMOLD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
NE856M03-A Price

Technical Specifications of NE856M03-A

CategoryDiscrete Semiconductor Products
FamilyTransistors - Bipolar (BJT) - RF
ManufacturerCEL
Series-
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2.5dB @ 1GHz
Gain-
Power - Max125mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 7mA, 3V
Current - Collector (Ic) (Max)100mA
Mounting TypeSurface Mount
Package / CaseSOT-623F
Supplier Device Package3-SuperMiniMold (M03)
<   Previous Product Next Product   >
Home > Products

Electronic Components and Parts

NE856M03-A

Manufacturer Part Number NE856M03-A
Manufacturer CEL
Description TRANSISTOR NPN 1GHZ MINIMOLD
Lead Free Status / RoHS Status Lead free / RoHS Compliant
NE856M03-A Price

Technical Specifications of NE856M03-A

CategoryDiscrete Semiconductor Products
FamilyTransistors - Bipolar (BJT) - RF
ManufacturerCEL
Series-
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition4.5GHz
Noise Figure (dB Typ @ f)1.4dB ~ 2.5dB @ 1GHz
Gain-
Power - Max125mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 7mA, 3V
Current - Collector (Ic) (Max)100mA
Mounting TypeSurface Mount
Package / CaseSOT-623F
Supplier Device Package3-SuperMiniMold (M03)
We can supply CEL part# NE856M03-A. Use the request quote form to request NE856M03-A pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NE856M03-A. The price and lead time for NE856M03-A depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# NE856M03-A. We look forward to doing business with you.

Related parts for NE856M03-A

7X-45.000MBE-T
7X-45.000MBE-T
TXC CORPORATION
45MHz CMOS XO (Standard) Oscillator Surface Mount 3.3V 20mA Enable/Disable

SIT3808AC-2-28NE
SIT3808AC-2-28NE
SiTIME
1MHz ~ 80MHz LVCMOS, LVTTL MEMS VCXO Programmable Oscillator Surface Mount 2.8V 33mA

SIT8008BC-33-33E-27.000000Y
SIT8008BC-33-33E-27.000000Y
SiTIME
OSC XO 3.3V 27MHZ OE

416F37425IDT
416F37425IDT
CTS-Frequency Controls
37.4MHz ±20ppm Crystal 18pF 200 Ohm -40°C ~ 85°C Surface Mount 4-SMD, No Lead (DFN, LCC)

416F37035ALT
416F37035ALT
CTS-Frequency Controls
37MHz ±30ppm Crystal 12pF 200 Ohm -10°C ~ 60°C Surface Mount 4-SMD, No Lead (DFN, LCC)

SIT1602BCF11-XXE-12.000000G
SIT1602BCF11-XXE-12.000000G
SiTIME
12MHz LVCMOS MEMS (Silicon) Oscillator Surface Mount 2.5 V ~ 3.3 V 4.5mA Enable/Disable

SIT1602BCT22-18E-24.576000E
SIT1602BCT22-18E-24.576000E
SiTIME
OSC XO 1.8V 24.576MHZ OE

ASA1-16.000MHZ-L-T
ASA1-16.000MHZ-L-T
Abracon LLC
16MHz HCMOS XO (Standard) Oscillator Surface Mount 2.5V 5mA Enable/Disable

B2S-G
B2S-G
Comchip Technology
DIODE BRIDGE 200V 0.8A MBS

B8S-G
B8S-G
Comchip Technology
DIODE BRIDGE 800V 0.8A MBS

MBR1635-E3/45
MBR1635-E3/45
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 35V 16A TO220AC

FK3506010L
FK3506010L
Panasonic Electronic Components
MOSFET N-CH 60V 100MA SMINI3

APT29F100L
APT29F100L
Microsemi Corporation
MOSFET N-CH 1000V 30A TO264

1N5365A/TR12
1N5365A/TR12
Microsemi Corporation
DIODE ZENER 36V 5W T18

MMBZ5249C-HE3-18
MMBZ5249C-HE3-18
Vishay Semiconductor Diodes Division
DIODE ZENER 19V 225MW SOT23-3

SKI03036
SKI03036
Sanken
MOSFET N-CH 30V 80A TO-263

2SK4196LS-1E
2SK4196LS-1E
ON Semiconductor
MOSFET N-CH 500V 5.5A TO-220FI

HN2S02JE(TE85L,F)
HN2S02JE(TE85L,F)
Toshiba Semiconductor and Storage
DIODE ARRAY SCHOTTKY 40V ESV

GP1M011A050FSH
GP1M011A050FSH
Global Power Technologies Group
MOSFET N-CH 500V 10A TO220F

CZRNC55C13-G
CZRNC55C13-G
Comchip Technology
DIODE ZENER 13V 500MW 1206

<   Previous Product Next Product   >

Related keywords for NE856M03-A