Technical Specifications of IDH10SG60C
Datasheet | IDH10SG60C datasheet |
Category | Discrete Semiconductor Products |
Family | Diodes - Rectifiers - Single |
Manufacturer | Infineon Technologies |
Series | thinQ!? |
Packaging | Tube |
Diode Type | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If | 2.1V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 90μA @ 600V |
Capacitance @ Vr, F | 290pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | PG-TO220-2 |
Operating Temperature - Junction | -55°C ~ 175°C |
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