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RN2707JE(TE85L,F)
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Manufacturer Part Number | RN2707JE(TE85L,F) |
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Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
RN2707JE(TE85L,F) Price |
Technical Specifications of RN2707JE(TE85L,F)
Datasheet | RN2707JE(TE85L,F) datasheet |
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Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-553 |
Supplier Device Package | ESV |