Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > RN2911,LF
RN2911,LF
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | RN2911,LF |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2PNP PREBIAS 0.2W US6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
RN2911,LF Price |
Technical Specifications of RN2911,LF
Datasheet | RN2911,LF datasheet |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 10k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |