Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMD5DXV6T1
EMD5DXV6T1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | EMD5DXV6T1 |
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Manufacturer | ON Semiconductor |
Description | TRANS PREBIAS NPN/PNP SOT563 |
Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant |
EMD5DXV6T1 Price |
Technical Specifications of EMD5DXV6T1
Datasheet | EMD5DXV6T1 datasheet |
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Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k, 47k |
Resistor - Emitter Base (R2) (Ohms) | 10k, 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 20 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |