Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMF5XV6T5G
EMF5XV6T5G
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Manufacturer Part Number | EMF5XV6T5G |
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Manufacturer | ON Semiconductor |
Description | TRANS NPN PREBIAS/PNP SOT563 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
EMF5XV6T5G Price |
Technical Specifications of EMF5XV6T5G
Datasheet | EMF5XV6T5G datasheet |
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Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN Pre-Biased, 1 PNP |
Current - Collector (Ic) (Max) | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |