Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMF8T2R
EMF8T2R
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | EMF8T2R |
---|---|
Manufacturer | Rohm Semiconductor |
Description | TRANS NPN PREBIAS/NPN 0.15W EMT6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
EMF8T2R Price |
Technical Specifications of EMF8T2R
Category | Discrete Semiconductor Products |
---|---|
Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer | Rohm Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max) | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Resistor - Base (R1) (Ohms) | 47k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 320MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |