Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSVMUN5133DW1T1G
NSVMUN5133DW1T1G
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Manufacturer Part Number | NSVMUN5133DW1T1G |
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Manufacturer | ON Semiconductor |
Description | TRANS 2PNP BRT BIPO SOT363-6 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
NSVMUN5133DW1T1G Price |
Technical Specifications of NSVMUN5133DW1T1G
Datasheet | NSVMUN5133DW1T1G datasheet |
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Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Manufacturer | ON Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |