Technical Specifications of 2N2060L
Datasheet | 2N2060L datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays |
Manufacturer | Microsemi IRE Division |
Series | - |
Packaging | Bulk |
Transistor Type | 2 NPN (Dual) |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10μA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Power - Max | 2.12W |
Frequency - Transition | - |
Mounting Type | Through Hole |
Package / Case | TO-78-6 Metal Can |
Supplier Device Package | TO-78-6 |
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