Technical Specifications of ULN2004AFWG,N,E
| Datasheet |  ULN2004AFWG,N,E datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Toshiba Semiconductor and Storage |
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| Series | - |
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| Packaging | Cut Tape (CT) |
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| Transistor Type | 7 NPN Darlington |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 50V |
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| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500μA, 350mA |
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| Current - Collector Cutoff (Max) | - |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
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| Power - Max | 1.25W |
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| Frequency - Transition | - |
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| Mounting Type | Surface Mount |
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| Package / Case | 16-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 16-SOL |
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