Technical Specifications of MPQ6502
| Datasheet |  MPQ6502 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Central Semiconductor Corp |
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| Series | - |
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| Packaging | Tube |
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| Transistor Type | 2 NPN, 2 PNP |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 30V |
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| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 30mA, 300mA |
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| Current - Collector Cutoff (Max) | 30nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
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| Power - Max | 650mW |
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| Frequency - Transition | 200MHz |
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| Mounting Type | Through Hole |
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| Package / Case | 14-DIP (0.300", 7.62mm) |
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| Supplier Device Package | TO-116 |
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