Technical Specifications of IMX9T110
| Datasheet |  IMX9T110 datasheet |
|---|
| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Arrays |
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| Manufacturer | Rohm Semiconductor |
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| Series | - |
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| Packaging | Tape & Reel (TR) |
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| Transistor Type | 2 NPN (Dual) |
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| Current - Collector (Ic) (Max) | 500mA |
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| Voltage - Collector Emitter Breakdown (Max) | 20V |
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| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
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| Current - Collector Cutoff (Max) | 500nA (ICBO) |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 560 @ 10mA, 3V |
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| Power - Max | 300mW |
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| Frequency - Transition | 350MHz |
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| Mounting Type | Surface Mount |
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| Package / Case | SC-74, SOT-457 |
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| Supplier Device Package | SMT6 |
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