Technical Specifications of HN1A01FE-GR,LF
Datasheet | HN1A01FE-GR,LF datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Arrays |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 100mW |
Frequency - Transition | 80MHz |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
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