Technical Specifications of NESG7030M04-A
Datasheet | NESG7030M04-A datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | CEL |
Series | - |
Packaging | Bulk |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 4.3V |
Frequency - Transition | 5.8GHz |
Noise Figure (dB Typ @ f) | 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz |
Gain | 14dB ~ 21dB |
Power - Max | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 5mA, 2V |
Current - Collector (Ic) (Max) | 30mA |
Mounting Type | Surface Mount |
Package / Case | SOT-343F |
Supplier Device Package | M04 |
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