Technical Specifications of NE851M13-T3-A
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - RF |
Manufacturer | CEL |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz |
Gain | 4dB ~ 5.5dB @ 2GHZ |
Power - Max | 140mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 1V |
Current - Collector (Ic) (Max) | 100mA |
Mounting Type | Surface Mount |
Package / Case | SOT-3 |
Supplier Device Package | M13 |
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