Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > UNR412100A
UNR412100A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | UNR412100A |
---|---|
Manufacturer | Panasonic Electronic Components |
Description | TRANS PREBIAS PNP 300MW NS-B1 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
UNR412100A Price | ![]() |
Technical Specifications of UNR412100A
Datasheet | ![]() |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer | Panasonic Electronic Components |
Series | - |
Packaging | Tape & Box (TB) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 1μA |
Frequency - Transition | 200MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | 3-SIP |
Supplier Device Package | NS-B1 |