Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTB113EUF
PDTB113EUF
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | PDTB113EUF |
---|---|
Manufacturer | NXP Semiconductors |
Description | TRANS PREBIAS PNP 0.425W |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
PDTB113EUF Price |
Technical Specifications of PDTB113EUF
Datasheet | PDTB113EUF datasheet |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer | NXP Semiconductors |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 140MHz |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SC-70 |