Home > Products > Discrete Semiconductor > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1421TE85LF
RN1421TE85LF
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Manufacturer Part Number | RN1421TE85LF |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS PREBIAS NPN 200MW SMINI |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
RN1421TE85LF Price |
Technical Specifications of RN1421TE85LF
Datasheet | RN1421TE85LF datasheet |
---|---|
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 100mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 2mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 300MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | S-Mini |