Technical Specifications of STBV45G-AP
| Datasheet |  STBV45G-AP datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - Bipolar (BJT) - Single |
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| Manufacturer | STMicroelectronics |
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| Series | - |
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| Packaging | Tape & Box (TB) |
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| Transistor Type | NPN |
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| Current - Collector (Ic) (Max) | 750mA |
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| Voltage - Collector Emitter Breakdown (Max) | 400V |
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| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 135mA, 400mA |
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| Current - Collector Cutoff (Max) | 250μA |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 400mA, 5V |
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| Power - Max | 950mW |
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| Frequency - Transition | - |
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| Mounting Type | Through Hole |
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| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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| Supplier Device Package | TO-92AP |
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