Technical Specifications of 2SD2096T114E
Category | Discrete Semiconductor Products |
Family | Transistors - Bipolar (BJT) - Single |
Manufacturer | Rohm Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 3A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
Current - Collector Cutoff (Max) | 10μA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
Power - Max | 1.8W |
Frequency - Transition | 8MHz |
Mounting Type | Through Hole |
Package / Case | HRT |
Supplier Device Package | HRT |
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