Technical Specifications of SIA911DJ-T1-GE3
Datasheet | SIA911DJ-T1-GE3 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Arrays |
Manufacturer | Vishay Siliconix |
Series | TrenchFET? |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.5A |
Rds On (Max) @ Id, Vgs | 94 mOhm @ 2.8A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Gate Charge (Qg) @ Vgs | 12.8nC @ 8V |
Input Capacitance (Ciss) @ Vds | 355pF @ 10V |
Power - Max | 6.5W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK? SC-70-6 Dual |
Supplier Device Package | PowerPAK? SC-70-6 Dual |
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