Technical Specifications of EPC2101ENG
| Datasheet |  EPC2101ENG datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | EPC |
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| Series | eGaN? |
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| Packaging | Tray |
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| FET Type | 2 N-Channel (Half Bridge) |
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| FET Feature | GaNFET (Gallium Nitride) |
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| Drain to Source Voltage (Vdss) | 60V |
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| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
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| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V |
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| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
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| Gate Charge (Qg) @ Vgs | 2.7nC @ 5V |
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| Input Capacitance (Ciss) @ Vds | 300pF @ 30V |
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| Power - Max | - |
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| Operating Temperature | -40°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | Die |
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| Supplier Device Package | Die |
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