Technical Specifications of RJM0306JSP-01#J0
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Arrays |
Manufacturer | Renesas Electronics America |
Series | - |
Packaging | Tube |
FET Type | 2 N and 2 P-Channel (H-Bridge) |
FET Feature | Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.5A |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) @ Vgs | 5nC @ 10V |
Input Capacitance (Ciss) @ Vds | 290pF @ 10V |
Power - Max | 2.2W |
Operating Temperature | - |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
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