Technical Specifications of RJM0306JSP-01#J0
| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Renesas Electronics America |
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| Series | - |
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| Packaging | Tube |
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| FET Type | 2 N and 2 P-Channel (H-Bridge) |
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| FET Feature | Logic Level Gate, 4V Drive |
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| Drain to Source Voltage (Vdss) | 30V |
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| Current - Continuous Drain (Id) @ 25°C | 3.5A |
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| Rds On (Max) @ Id, Vgs | 65 mOhm @ 2A, 10V |
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| Vgs(th) (Max) @ Id | - |
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| Gate Charge (Qg) @ Vgs | 5nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 290pF @ 10V |
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| Power - Max | 2.2W |
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| Operating Temperature | - |
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| Mounting Type | Surface Mount |
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| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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| Supplier Device Package | 8-SOP |
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