Technical Specifications of SI8900EDB-T2-E1
| Datasheet |  SI8900EDB-T2-E1 datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Arrays |
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| Manufacturer | Vishay Siliconix |
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| Series | TrenchFET? |
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| Packaging | Tape & Reel (TR) |
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| FET Type | 2 N-Channel (Dual) Common Drain |
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| FET Feature | Logic Level Gate |
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| Drain to Source Voltage (Vdss) | 20V |
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| Current - Continuous Drain (Id) @ 25°C | 5.4A |
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| Rds On (Max) @ Id, Vgs | - |
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| Vgs(th) (Max) @ Id | 1V @ 1.1mA |
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| Gate Charge (Qg) @ Vgs | - |
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| Input Capacitance (Ciss) @ Vds | - |
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| Power - Max | 1W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Surface Mount |
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| Package / Case | 10-UFBGA, CSPBGA |
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| Supplier Device Package | 10-Micro Foot? CSP (2x5) |
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