Technical Specifications of APT94N65B2C6
Datasheet | APT94N65B2C6 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Microsemi Corporation |
Series | - |
Packaging | Bulk |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Super Junction |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 35.2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 3.5mA |
Gate Charge (Qg) @ Vgs | 320nC @ 10V |
Input Capacitance (Ciss) @ Vds | 8140pF @ 25V |
Power - Max | 833W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 Variant |
Supplier Device Package | T-MAX? [B2] |
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