Technical Specifications of BSS205N H6327
Datasheet | BSS205N H6327 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 11μA |
Gate Charge (Qg) @ Vgs | 3.2nC @ 4.5V |
Input Capacitance (Ciss) @ Vds | 419pF @ 10V |
Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | PG-SOT23-3 |
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