Technical Specifications of RJK1001DPP-E0#T2
Datasheet | RJK1001DPP-E0#T2 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Renesas Electronics America |
Series | - |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) @ Vgs | 147nC @ 10V |
Input Capacitance (Ciss) @ Vds | 10000pF @ 10V |
Power - Max | 30W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Supplier Device Package | TO-220FP |
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