Technical Specifications of SI8816EDB-T2-E1
Datasheet | SI8816EDB-T2-E1 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay Siliconix |
Series | TrenchFET? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | 109 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id | 1.4V @ 250μA |
Gate Charge (Qg) @ Vgs | 8nC @ 10V |
Input Capacitance (Ciss) @ Vds | 195pF @ 15V |
Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 4-XFBGA |
Supplier Device Package | 4-Microfoot |
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