Technical Specifications of JAN2N6770T1
Datasheet | JAN2N6770T1 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Microsemi IRE Division |
Series | Military, MIL-PRF-19500/543 |
Packaging | Bulk |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) @ Vgs | 120nC @ 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-254-3, TO-254AA (Straight Leads) |
Supplier Device Package | TO-254AA |
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