Technical Specifications of SUP75P05-08-E3
Datasheet | SUP75P05-08-E3 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay Siliconix |
Series | TrenchFET? |
Packaging | Cut Tape (CT) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Gate Charge (Qg) @ Vgs | 225nC @ 10V |
Input Capacitance (Ciss) @ Vds | 8500pF @ 25V |
Power - Max | 3.7W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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