Technical Specifications of TP0610K-T1
Datasheet | TP0610K-T1 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay Siliconix |
Series | TrenchFET? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 185mA (Ta) |
Rds On (Max) @ Id, Vgs | 6 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Gate Charge (Qg) @ Vgs | 1.7nC @ 15V |
Input Capacitance (Ciss) @ Vds | 23pF @ 25V |
Power - Max | 350mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
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