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IPB65R660CFDAATMA1
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Manufacturer Part Number | IPB65R660CFDAATMA1 |
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Manufacturer | Infineon Technologies |
Description | MOSFET N-CH TO263-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IPB65R660CFDAATMA1 Price | ![]() |
Technical Specifications of IPB65R660CFDAATMA1
Datasheet | ![]() |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, CoolMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Rds On (Max) @ Id, Vgs | 660 mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 200μA |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) @ Vds | 543pF @ 100V |
Power - Max | 62.5W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263 |