Technical Specifications of IPD60R1K0CEATMA1
Datasheet | IPD60R1K0CEATMA1 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | CoolMOS? CE |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 130μA |
Gate Charge (Qg) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) @ Vds | 280pF @ 100V |
Power - Max | 37W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252-3 |
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