Technical Specifications of IXFN200N07
Datasheet | IXFN200N07 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | IXYS |
Series | HiPerFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 70V |
Current - Continuous Drain (Id) @ 25°C | 200A |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 8mA |
Gate Charge (Qg) @ Vgs | 480nC @ 10V |
Input Capacitance (Ciss) @ Vds | 9000pF @ 25V |
Power - Max | 520W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Supplier Device Package | SOT-227B |
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