Technical Specifications of SIA467EDJ-T1-GE3
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Vishay Siliconix |
Series | TrenchFET? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Gate Charge (Qg) @ Vgs | 72nC @ 8V |
Input Capacitance (Ciss) @ Vds | 2520pF @ 6V |
Power - Max | 19W |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK? SC-70-6 |
Supplier Device Package | PowerPAK? SC-70-6 Single |
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