Technical Specifications of FQI27N25TU_F085
Datasheet | FQI27N25TU_F085 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Fairchild Semiconductor |
Series | Automotive, AEC-Q101 |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 25.5A (Tc) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.75A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Gate Charge (Qg) @ Vgs | 65nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
Power - Max | 3.13W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Supplier Device Package | I2PAK (TO-262) |
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