Technical Specifications of TPN11006NL,LQ
Datasheet | TPN11006NL,LQ datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Rds On (Max) @ Id, Vgs | 11.4 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 200μA |
Gate Charge (Qg) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2000pF @ 30V |
Power - Max | 700mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | 8-TSON Advance |
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