Technical Specifications of IXFN20N120
Datasheet | IXFN20N120 datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | IXYS |
Series | HiPerFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 20A |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 8mA |
Gate Charge (Qg) @ Vgs | 160nC @ 10V |
Input Capacitance (Ciss) @ Vds | 7400pF @ 25V |
Power - Max | 780W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Supplier Device Package | SOT-227B |
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