Technical Specifications of TPC8132,LQ(S
Datasheet | TPC8132,LQ(S datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET P-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 200μA |
Gate Charge (Qg) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1580pF @ 10V |
Power - Max | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |
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