Technical Specifications of FQI9N50CTU
Datasheet | FQI9N50CTU datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Fairchild Semiconductor |
Series | QFET? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) @ Vds | 1030pF @ 25V |
Power - Max | 135W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Supplier Device Package | I2PAK (TO-262) |
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