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BSZ12DN20NS3GATMA1
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Manufacturer Part Number | BSZ12DN20NS3GATMA1 |
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Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 200V 11.3A 8TSDSON |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
BSZ12DN20NS3GATMA1 Price |
Technical Specifications of BSZ12DN20NS3GATMA1
Datasheet | BSZ12DN20NS3GATMA1 datasheet |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 5.7A, 10V |
Vgs(th) (Max) @ Id | 4V @ 25μA |
Gate Charge (Qg) @ Vgs | 8.7nC @ 10V |
Input Capacitance (Ciss) @ Vds | 680pF @ 100V |
Power - Max | 50W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Supplier Device Package | PG-TSDSON-8 (3.3x3.3) |