Technical Specifications of IXTP8N65X2M
| Datasheet |  IXTP8N65X2M datasheet |
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| Category | Discrete Semiconductor Products |
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| Family | Transistors - FETs, MOSFETs - Single |
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| Manufacturer | IXYS |
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| Series | - |
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| Packaging | Tube |
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| FET Type | MOSFET N-Channel, Metal Oxide |
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| FET Feature | Standard |
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| Drain to Source Voltage (Vdss) | 650V |
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| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
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| Rds On (Max) @ Id, Vgs | 550 mOhm @ 4A, 10V |
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| Vgs(th) (Max) @ Id | 5V @ 250μA |
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| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
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| Input Capacitance (Ciss) @ Vds | 800pF @ 25V |
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| Power - Max | 32W |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Package / Case | TO-220-3 |
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| Supplier Device Package | TO-220 |
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We can supply IXYS part# IXTP8N65X2M. Use the request quote form to request IXTP8N65X2M pirce and lead time. RANTLE EAST ELECTRONIC - ICRFQ.com is an independent stocking distributor of electronic components. With 5+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTP8N65X2M. The price and lead time for IXTP8N65X2M depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# IXTP8N65X2M. We look forward to doing business with you.
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