Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPD26N06S2L35ATMA2
IPD26N06S2L35ATMA2
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Manufacturer Part Number | IPD26N06S2L35ATMA2 |
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Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 55V 30A TO252-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IPD26N06S2L35ATMA2 Price |
Technical Specifications of IPD26N06S2L35ATMA2
Datasheet | IPD26N06S2L35ATMA2 datasheet |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 2V @ 26μA |
Gate Charge (Qg) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) @ Vds | 621pF @ 25V |
Power - Max | 68W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3-11 |