Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPB35N10S3L26ATMA1
IPB35N10S3L26ATMA1
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Manufacturer Part Number | IPB35N10S3L26ATMA1 |
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Manufacturer | Infineon Technologies |
Description | MOSFET N-CH TO263-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IPB35N10S3L26ATMA1 Price | ![]() |
Technical Specifications of IPB35N10S3L26ATMA1
Datasheet | ![]() |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Rds On (Max) @ Id, Vgs | 26.3 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 39μA |
Gate Charge (Qg) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2700pF @ 25V |
Power - Max | 71W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3-2 |