Technical Specifications of 2SK2866(F)
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Packaging | Bulk |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2040pF @ 10V |
Power - Max | 125W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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