Technical Specifications of RDD022N60TL
Datasheet | RDD022N60TL datasheet |
Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Rohm Semiconductor |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Rds On (Max) @ Id, Vgs | 6.7 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 4.7V @ 1mA |
Gate Charge (Qg) @ Vgs | 7nC @ 10V |
Input Capacitance (Ciss) @ Vds | 175pF @ 25V |
Power - Max | 20W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | CPT3 |
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