Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > IPI80N06S2L11AKSA2
IPI80N06S2L11AKSA2
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Manufacturer Part Number | IPI80N06S2L11AKSA2 |
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Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 55V 80A TO262-3 |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
IPI80N06S2L11AKSA2 Price | ![]() |
Technical Specifications of IPI80N06S2L11AKSA2
Datasheet | ![]() |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tube |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Rds On (Max) @ Id, Vgs | 10.7 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 2V @ 93μA |
Gate Charge (Qg) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2075pF @ 25V |
Power - Max | 158W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Supplier Device Package | PG-TO262-3-1 |