Home > Products > Discrete Semiconductor > Transistors - FETs, MOSFETs - Single > BSB104N08NP3GXUSA1
BSB104N08NP3GXUSA1
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Manufacturer Part Number | BSB104N08NP3GXUSA1 |
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Manufacturer | Infineon Technologies |
Description | MOSFET N-CH 80V 13A 2WDSON |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
BSB104N08NP3GXUSA1 Price | ![]() |
Technical Specifications of BSB104N08NP3GXUSA1
Datasheet | ![]() |
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Category | Discrete Semiconductor Products |
Family | Transistors - FETs, MOSFETs - Single |
Manufacturer | Infineon Technologies |
Series | OptiMOS? |
Packaging | Tape & Reel (TR) |
FET Type | MOSFET N-Channel, Metal Oxide |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 50A (Tc) |
Rds On (Max) @ Id, Vgs | 10.4 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 40μA |
Gate Charge (Qg) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2100pF @ 40V |
Power - Max | 2.8W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Supplier Device Package | MG-WDSON-2, CanPAK M? |